? semiconductor components industries, llc, 2008 september, 2008 ? rev. 5 1 publication order number: mj11012/d mj11015 (pnp); mj11012, mj11016 (npn) mj11016 is a preferred device high-current complementary silicon transistors . . . for use as output devices in complementary general purpose amplifier applications. ? high dc current gain ? h fe = 1000 (min) @ i c ? 20 adc ? monolithic construction with built ? in base emitter shunt resistor ? junction temperature to + 200 c maximum ratings rating symbol value unit collector ? emitter voltage mj11012 mj11015/6 v ceo 60 120 vdc collector ? base voltage mj11012 mj11015/6 v cb 60 120 vdc emitter ? base voltage v eb 5 vdc collector current i c 30 adc base current i b 1 adc total device dissipation @ t c = 25 c derate above 25 c @ t c = 100 c p d 200 1.15 w w/ c operating storage junction temperature range t j , t stg ? 55 to + 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 0.87 c/w maximum lead temperature for sol- dering purposes for 10 seconds t l 275 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. http://onsemi.com 30 ampere darlington power transistors complementary silicon 60 ? 120 volts, 200 watts to ? 204aa (to ? 3) case 1 ? 07 style 1 marking diagram mj1101x = device code x = 2, 5 or 6 g= pb ? free package a = location code yy = year ww = work week mex = country of orgin mj1101xg ayyww mex device package shipping ordering information mj11012 to ? 3 100 units/tray mj11012g to ? 3 (pb ? free) 100 units/tray collector case base 1 emitter 2 collector case base 1 emitter 2 npn pnp mj11016 mj11015 mj11012 preferred devices are recommended choices for future use and best overall value. mj11015 to ? 3 100 units/tray mj11015g to ? 3 (pb ? free) 100 units/tray mj11016 to ? 3 100 units/tray MJ11016G to ? 3 (pb ? free) 100 units/tray 2 1
mj11015 (pnp); mj11012, mj11016 (npn) http://onsemi.com 2 figure 1. darlington circuit schematic base emitter collector 8.0 k 40 pnp mj11015 base emitter collector 8.0 k 40 npn mj11012 mj11016 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted.) ?????????????????????? ?????????????????????? characteristics ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter breakdown voltage(1) (i c = 100 madc, i b = 0) mj11012 mj11015, mj11016 ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter leakage current (v ce = 60 vdc, r be = 1k ohm) mj11012 (v ce = 120 vdc, r be = 1k ohm) mj11015, mj11016 (v ce = 60 vdc, r be = 1k ohm, t c = 150 c) mj11012 (v ce = 120 vdc, r be = 1k ohm, t c = 150 c) mj11015, mj11016 ????? ????? ????? ????? ????? ??? ??? ??? ??? ??? ? ? ? ? ???? ???? ???? ???? ???? 1 1 5 5 ??? ??? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 5 ??? ??? ??? ?????????????????????? ?????????????????????? ? emitter leakage current (v ce = 50 vdc, i b = 0) ????? ????? ??? ??? ? ???? ???? 1 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics(1) ?????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? dc current gain (i c = 20 adc,v ce = 5 vdc) (i c = 30 adc, v ce = 5 vdc) ????? ????? ????? ????? ??? ??? ??? ??? ???? ???? ???? ???? ? ? ??? ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 20 adc, i b = 200 madc) (i c = 30 adc, i b = 300 madc) ????? ????? ????? ??? ??? ??? ? ? ???? ???? ???? 3 4 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter saturation voltage (i c = 20 a, i b = 200 madc) (i c = 30 a, i b = 300 madc) ????? ????? ????? ??? ??? ??? ? ? ???? ???? ???? 3.5 5 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? ?????????????????????? current ? gain bandwidth product (i c = 10 a, v ce = 3 vdc, f = 1 mhz) ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? mhz (1) pulse test: pulse width = 300 s, duty cycle 2.0%.
mj11015 (pnp); mj11012, mj11016 (npn) http://onsemi.com 3 30 k 0.3 figure 2. dc current gain (1) i c , collector current (amp) 0.5 0.7 1 2 3 10 20 30 7 k 3 k 2 k 700 figure 3. small ? signal current gain h fe , small-signal current gain (normalize d 2 10 f, frequency (khz) 20 30 50 70 200 300 500 1.0 k 0.2 0.05 0.02 0.01 10 k 5 k h fe , dc current gain v ce = 5 vdc t j = 25 c 500 300 5 7 100 5 0.1 figure 4. ?on? voltages (1) i c , collector current (amp) 100 0 v be(sat) figure 5. active region dc safe operating area 20 k pnp mj11015 npn mj11012, mj11016 v, voltage (volts) 4 3 2 1 50 v ce , collector-emitter voltage (volts) 35 10 20 200 10 5 0.01 20 i c , collector current (amp) 2 1 0.2 0.1 0.5 0.05 0.02 50 t j = 25 c i c /i b = 100 v ce = 3 vdc i c = 10 madc t j = 25 c 0.1 0.5 1 0.005 700 mj11012 mj11015, mj11016 27 30 70 100 22050 0.2 0.5 1 10 5 v ce(sat) pnp mj11015 npn mj11012, mj11016 pnp mj11015 npn mj11012, mj11016 bonding wire limitation thermal limitation @ t c = 25 c second breakdown limitation there are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operations e.g., the transistor must not be subjected to greater dissipation than the curves indicate. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
mj11015 (pnp); mj11012, mj11016 (npn) http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k ? t ? seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t ? q ? ? y ? 2 1 u l g b v h to ? 204 (to ? 3) case 1 ? 07 issue z style 1: pin 1. base 2. emitter case: collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mj11012/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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